The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
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AMMNS014.pdf
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Author(s)
Jin, Lijuan
Pey, Kin Leong
Choi, Wee Kiong
Fitzgerald, Eugene A.
Antoniadis, Dimitri A.
Pitera, Arthur J.
Lee, Minjoo L.
Chi, D.Z.
Date Issued
January 2003
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁â‚‹xGex)₂, Ni(Si₁â‚‹yGey), and Si₁â‚‹zGez (z>y>x) was formed; whereas only Ni₃(Si₁â‚‹xGex)₂ and Ni(Si₁â‚‹yGey>) were observed by in situ annealing.
Subjects
Ni-germanosilicide
in situ annealing
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