Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources
Name
1.5034131.pdf
Description
Published version
Size
4.38 MB
Format
Adobe PDF
Checksum (MD5)
9fc7ca7abd98eb6caa49834af9688d78
Author(s)
Lozano, Paulo C
Date Issued
September 2018
Journal
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society
Citation
Xu, Tiantong, Zhi Tao and Paulo C. Lozano. “Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources.” Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, vol. 36, no. 5, 2018, article 052601 © 2018 The Author(s)
Version
Final published version
Abstract
Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF 4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Pyrex 7740), silicon, and silicon dioxide targets. The results indicate that negative EMI-BF 4 ion beams can prevent issues related to surface charge accumulation on dielectric substrates, achieving etching selectivities of SiO 2 :Si of at least 1.55. The etching rate increases on glass, silicon, and silicon dioxide at higher ion landing energies. It is shown that the negative EMI-BF 4 beam has a higher yield than traditional metal gallium ion beams, likely due to the chemical reactivity of fluorine radicals. This effect is also noticeable when compared to results using positive EMI-BF 4 beams.
MIT Department
Massachusetts Institute of Technology. Department of Aeronautics and Astronautics
Terms of Use
Creative Commons Attribution 4.0 International license
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DOI of Published Version
https://doi.org/10.1116/1.5034131
