Single-layer graphene on silicon nitride micromembrane resonators
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Kong_Single-layer.pdf
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Checksum (MD5)
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Author(s)
Schmid, Silvan
Bagci, Tolga
Zeuthen, Emil
Taylor, Jacob M.
Herring, Patrick Kenichi
Cassidy, Maja C.
Marcus, Charles M.
Guillermo Villanueva, Luis
Amato, Bartolo
Boisen, Anja
Date Issued
February 2014
Journal
Journal of Applied Physics
Publisher
American Institute of Physics
Citation
Schmid, Silvan, Tolga Bagci, Emil Zeuthen, Jacob M. Taylor, Patrick K. Herring, Maja C. Cassidy, Charles M. Marcus, et al. “Single-Layer Graphene on Silicon Nitride Micromembrane Resonators.” Journal of Applied Physics 115, no. 5 (February 7, 2014): 054513.
Version
Final published version
Abstract
Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4862296
