Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics
Name
optica-6-4-473.pdf
Description
Published version
Size
1.72 MB
Format
Adobe PDF
Checksum (MD5)
22d77675c32ba30ab34f372e97fe930b
Author(s)
Zhang, Yan
Du, Qingyang
Wang, Chuangtang
Fakhrul, Takian
Liu, Shuyuan
Deng, Longjiang
Huang, Duanni
Pintus, Paolo
Bowers, John
Ross, Caroline A
Date Issued
2019
Journal
Optica
Publisher
The Optical Society
Version
Final published version
Abstract
© 2019 Optical Society of America. Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PICs). An ideal integrated optical isolator for a PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all of these requirements. In this paper we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record-high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully TE broadband isolators by depositing high-quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high-performance optical isolators on-chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1364/OPTICA.6.000473
