Design and fabrication of quantum-dot lasers
Name
320436763-MIT.pdf
Description
Full printable version
Size
24.35 MB
Format
Adobe PDF
Checksum (MD5)
0d71a41136b577f8c72d19a6e7d834c2
Author(s)
Nabanja, Sheila
Advisor(s)
Leslie A. Kolodziejski.
Date Issued
2008
Publisher
Massachusetts Institute of Technology
Abstract
Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, high differential gain and highly temperature stable light-current characteristics. This thesis investigates the lasing characteristics of a ridge-waveguide laser containing seven layers of quantum dots as the active region. A summary of the electrical and optical performance data of the heterostructure quantum dot lasers, as well as previously fabricated quantum well lasers, is presented. The motivation of using InAs quantum dots in the active region is to produce near infrared emission for telecommunication applications.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (p. 87-89).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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reproduction or distribution in any format is prohibited without written
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