Single photon detection by cavity-assisted all-optical gain
Name
PhysRevB.99.205303.pdf
Description
Published version
Size
1.41 MB
Format
Adobe PDF
Checksum (MD5)
5901da9745ec0cbfb2e711003287bdd8
Author(s)
Panuski, Christopher
Pant, Mihir
Heuck, Mikkel
Hamerly, Ryan M
Englund, Dirk R.
Date Issued
May 2019
Journal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Panuski, Christopher, et al. "Single photon detection by cavity-assisted all-optical gain." Physical Review B, 99, 20 (May 2019): 205303 © 2019 American Physical Society. US.
Version
Final published version
Abstract
We consider the free-carrier dispersion effect in a semiconductor nanocavity in the limit of discrete photoexcited electron-hole pairs. This analysis reveals the possibility of ultrafast, incoherent transduction and gain from a single photon signal to a strong coherent probe field. Homodyne detection of the displaced probe field enables an all-optical method for room-temperature, photon-number-resolving single photon detection. In particular, we estimate that a single photon absorbed within a silicon nanocavity can, within tens of picoseconds, be detected with ∼99% efficiency and a dark count rate on the order of kilohertz assuming a mode volume Veff∼10-2(λ/nSi)3 for a 4.5-μm probe wavelength and a loaded quality factor Q on the order of 104. Keywords: Nonlinear Dynamics; General Physics; Atomic, Molecular & Optical.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/physrevb.99.205303
