Atomic structure of self-buffered BaZr(S, Se)3 epitaxial thin film interfaces
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063207_1_6.0004010.pdf
Description
Published version
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4.09 MB
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f27192a8f62bff700eef50b5682e8d65
Author(s)
Xu, Michael
Ye, Kevin
Sadeghi, Ida
Jaramillo, R
LeBeau, James M
Date Issued
December 16, 2024
Journal
Journal of Vacuum Science & Technology A
Publisher
AIP Publishing
Citation
Michael Xu, Kevin Ye, Ida Sadeghi, R. Jaramillo, James M. LeBeau; Atomic structure of self-buffered BaZr(S, Se)3 epitaxial thin film interfaces. J. Vac. Sci. Technol. A 1 November 2024; 42 (6): 063207.
Version
Final published version
Abstract
Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S, Se)3 thin films grown on LaAlO3 by molecular beam epitaxy and postgrowth anion exchange is resolved using aberration-corrected scanning transmission electron microscopy. Epitaxial films are achieved from selfassembly of an interface “buffer” layer, which accommodates the large film/substrate lattice mismatch of nearly 40% for the alloy film studied here. The self-assembled buffer layer, occurring for both the as-grown sulfide and post-selenization alloy films, is shown to have rock-salt-like atomic stacking akin to a Ruddlesden–Popper phase. These results provide insights into oxide-chalcogenide heteroepitaxial film growth, illustrating a process that yields relaxed, crystalline, epitaxial chalcogenide perovskite films that support ongoing studies of optoelectronic and device properties.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1116/6.0004010
