40.4fJ/bit/mm Low-Swing On-Chip Signaling with Self-Resetting Logic Repeaters Embedded within a Mesh NoC in 45nm SOI CMOS
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Author(s)
Park, Sunghyun
Qazi, Masood
Peh, Li-Shiuan
Chandrakasan, Anantha P.
Date Issued
March 2013
Journal
Proceedings of the 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Park, Sunghyun, Masood Qazi, Li-Shiuan Peh, and Anantha P. Chandrakasan. “40.4fJ/bit/mm Low-Swing On-Chip Signaling with Self-Resetting Logic Repeaters Embedded Within a Mesh NoC in 45nm SOI CMOS.” 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE) (2013).
Version
Author's final manuscript
Abstract
Mesh NoCs are the most widely-used fabric in high-performance many-core chips today. They are, however, becoming increasingly power-constrained with the higher on-chip bandwidth requirements of high-performance SoCs. In particular, the physical datapath of a mesh NoC consumes significant energy. Low-swing signaling circuit techniques can substantially reduce the NoC datapath energy, but existing low-swing circuits involve huge area footprints, unreliable signaling or considerable system overheads such as an additional supply voltage, so embedding them into a mesh datapath is not attractive. In this paper, we propose a novel low-swing signaling circuit, a self-resetting logic repeater, to meet these design challenges. The SRLR enables single-ended low-swing pulses to be asynchronously repeated, and hence, consumes less energy than differential, clocked low-swing signaling. To mitigate global process variations while delivering high energy efficiency, three circuit techniques are incorporated. Fabricated in 45nm SOI CMOS, our 10mm SRLR-based low-swing datapath achieves 6.83Gb/s/µm bandwidth density with 40.4fJ/bit/mm energy at 4.1Gb/s data rate at 0.8V.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.7873/DATE.2013.332
