Dislocations Accelerate Oxygen Ion Diffusion in La[subscript 0.8]Sr[subscript 0.2]MnO[subscript 3] Epitaxial Thin Films
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Author(s) • • • • • • • • •
Navickas, Edvinas
Lu, Qiyang
Wallisch, Wolfgang
Bernardi, Johannes
Stöger-Pollach, Michael
Friedbacher, Gernot
Hutter, Herbert
Fleig, Jürgen
Chen, Yan
Huber, Tobias
Date Issued
October 2017
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Navickas, Edvinas et al. “Dislocations Accelerate Oxygen Ion Diffusion in La[subscript 0.8]Sr[subscript 0.2]MnO[subscript 3] Epitaxial Thin Films.” ACS Nano 11, 11 (October 2017): 11475–11487 © 2017 American Chemical Society
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Final published version
Abstract
Revealing whether dislocations accelerate oxygen ion transport is important for providing abilities in tuning the ionic conductivity of ceramic materials. In this study, we report how dislocations affect oxygen ion diffusion in Sr-doped LaMnO3(LSM), a model perovskite oxide that serves in energy conversion technologies. LSM epitaxial thin films with thicknesses ranging from 10 nm to more than 100 nm were prepared by pulsed laser deposition on single-crystal LaAlO3and SrTiO3substrates. The lattice mismatch between the film and substrates induces compressive or tensile in-plane strain in the LSM layers. This lattice strain is partially reduced by dislocations, especially in the LSM films on LaAlO3. Oxygen isotope exchange measured by secondary ion mass spectrometry revealed the existence of at least two very different diffusion coefficients in the LSM films on LaAlO3. The diffusion profiles can be quantitatively explained by the existence of fast oxygen ion diffusion along threading dislocations that is faster by up to 3 orders of magnitude compared to that in LSM bulk. Keywords: (La,Sr)MnO[subscript 3]; dislocation; epitaxial thin film; oxygen diffusion; oxygen surface exchange; strain; ToF-SIMS
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1021/ACSNANO.7B06228