Two-impurity Kondo model with spin-orbit interactions
Name
Mross-2009-Two-impurity Kondo.pdf
Size
270.61 KB
Format
Adobe PDF
Checksum (MD5)
b7ea191148ba99efeb378ad0e403fd97
Author(s)
Mross, David Fabian
Johannesson, Henrik
Date Issued
October 2009
Journal
Physical Review B
Publisher
American Physical Society
Citation
Mross, David F., and Henrik Johannesson. “Two-impurity Kondo model with spin-orbit interactions.” Physical Review B 80.15 (2009): 155302. © 2009 The American Physical Socie
Version
Final published version
Abstract
We study the two-impurity Kondo model (TIKM) in two dimensions with spin-orbit coupled conduction electrons. In the first part of the paper we analyze how spin-orbit interactions of Rashba as well as Dresselhaus type influence the Kondo and Ruderman-Kittel-Kasuya-Yoshida (RKKY) interactions in the TIKM, generalizing results obtained by H. Imamura et al. [Phys. Rev. B 69, 121303(R) (2004)] and J. Malecki [J. Stat. Phys. 129, 741 (2007)]. Using our findings we then explore the effect from spin-orbit interactions on the non-Fermi-liquid quantum critical transition between the RKKY-singlet and Kondo-screened RKKY-triplet states. We argue that spin-orbit interactions under certain conditions produce a line of critical points exhibiting the same leading scaling behavior as that of the ordinary TIKM. In the second part of the paper we shift focus and turn to the question of how spin-orbit interactions affect the entanglement between two localized RKKY-coupled spins in the parameter regime where the competition from the direct Kondo interaction can be neglected. Using data for a device with two spinful quantum dots patterned in a gated InAs heterostructure we show that a gate-controlled spin-orbit interaction may drive a maximally entangled state to one with vanishing entanglement or vice versa (as measured by the concurrence). This has important implications for proposals using RKKY interactions for nonlocal control of qubit entanglement in semiconductor heterostructures.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1103/PhysRevB.80.155302
