Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)[subscript 2]Te[subscript 3] film
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Author(s)
Li, W.
Claassen, M.
Moritz, B.
Jia, T.
Zhang, C.
Rebec, S.
Lee, J. J.
Hashimoto, M.
Lu, D.-H.
Moore, R. G.
Alternative Title
Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
Date Issued
September 2016
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Li, W. et al. “Origin of the Low Critical Observing Temperature of the Quantum Anomalous Hall Effect in V-Doped (Bi, Sb)[subscript 2]Te[subscript 3] Film.” Scientific Reports 6.1 (2016): n. pag.
Version
Final published version
Abstract
The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)[subscript 2]Te[subscript 3] films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)[subscript 2]Te[subscript 3] thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1038/srep32732
