Electrically tunable quantum spin Hall state in topological crystalline insulator thin films
Name
PhysRevB.91.081407.pdf
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835.25 KB
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Checksum (MD5)
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Author(s)
Liu, Junwei
Fu, Liang
Date Issued
February 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Liu, Junwei, and Liang Fu. “Electrically Tunable Quantum Spin Hall State in Topological Crystalline Insulator Thin Films.” Phys. Rev. B 91, no. 8 (February 2015). © 2015 American Physical Society
Version
Final published version
Abstract
Based on electronic structure calculations and theoretical analysis, we predict the (111) thin films of the SnTe class of three-dimensional (3D) topological crystalline insulators (TCIs) realize the quantum spin Hall phase in a wide range of thicknesses. The nontrivial topology originates from the intersurface coupling of the topological surface states of TCIs in the 3D limit. The intersurface coupling changes sign and gives rise to topological phase transitions as a function of film thickness. Furthermore, this coupling can be strongly affected by an external electric field, hence the quantum spin Hall phase can be effectively tuned under the experimentally accessible electric field.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.91.081407
