Resonance-enhanced waveguide-coupled silicon-germanium detector
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Ram_Resonance-enhanced.pdf
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1.85 MB
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Author(s)
Alloatti, Luca
Ram, Rajeev J
Date Issued
February 2016
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Alloatti, L. and Ram, R. J. “Resonance-Enhanced Waveguide-Coupled Silicon-Germanium Detector.” Applied Physics Letters 108, 7 (February 2016): 071105 © 2016 AIP Publishing LLC
Version
Final published version
Abstract
A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at −4 V bias is obtained with a dark current of less than 20 pA.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1063/1.4941995
