Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
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Buonassisi_Controlling dopant.pdf
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Author(s)
Recht, Daniel
Sullivan, Joseph Timothy
Reedy, Robert
Buonassisi, Tonio
Aziz, Michael J.
Date Issued
March 2012
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Recht, Daniel et al. “Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting.” Applied Physics Letters 100.11 (2012): 112112. ©2012 American Institute of Physics
Version
Final published version
Abstract
We describe a method to control the sub-surface dopant profile in “hyperdoped” silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur evaporation from the surface of the melt. This results in an 80% reduction of the near-surface dopant concentration, effectively embedding the hyperdoped region in a layer up to 180 nm beneath the surface. This method should facilitate the development of blocked impurity band devices.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3695171
