Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment
Name
Lu-2009-Enhancement-mode AlGaNGaN HEMTs with high linearity fabricated by hydrogen plasma treatment.pdf
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Author(s)
Palacios, Tomas
Lu, Bin
Saadat, Omair Irfan
Piner, Edwin L.
Date Issued
December 2009
Journal
Device Research Conference, 2009. DRC 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Bin Lu et al. “Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment.” Device Research Conference, 2009. DRC 2009. 2009. 59-60. ©2009 IEEE.
Version
Final published version
Abstract
Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate E-mode devices. For example, gate recess can be applied to conventional AlGaN/GaN HEMTs to achieve E-mode operation. However, these devices have very low threshold voltage and large gate leakage. Alternatively, the use of CF[subscript 4] plasma treatment in the gate region prior to gate metallization resuIts in E-mode AlGaN/GaN HEMTs with higher threshold voltage. In this paper, we demonstrate E-mode AlGaN/GaN HEMTs by hydrogen plasma treatment. The results are compared to the F-treated HEMTs an d depletion-mode (D-mode) HEMTs and important differences have been found in the linearity of these transistors.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/DRC.2009.5354885
