Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
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Author(s)
Hennig, Jonas
Dadgar, Armin
Zhang, Yuhao
Sun, Min
Piedra, Daniel
Palacios, Tomas
Date Issued
October 2017
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Zhang, Yuhao et al. “Reduction of on-Resistance and Current Crowding in Quasi-Vertical GaN Power Diodes.” Applied Physics Letters 111, 16 (October 16, 2017): 163506
Version
Final published version
Abstract
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN. The actual on-resistance of the drift region significantly depends on this
current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific
on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet
resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ~10 mΩ x cm² to below 1 mΩ x cm². Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1063/1.4989599
