Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers
Name
pnas.2112673118.pdf
Description
Published version
Size
1.69 MB
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Unknown
Checksum (MD5)
586ef1654f2d44f1c97245d14bd517a6
Author(s)
Zhang, Yang
Devakul, Trithep
Fu, Liang
Date Issued
September 2021
Journal
Proceedings of the National Academy of Sciences
Publisher
National Academy of Sciences
Citation
Zhang, Yang, Devakul, Trithep and Fu, Liang. 2021. "Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers." Proceedings of the National Academy of Sciences of the United States of America, 118 (36).
Version
Final published version
Abstract
While transition-metal dichalcogenide (TMD)–based moir ́e mate-rials have been shown to host various correlated electronicphenomena, topological states have not been experimentallyobserved until now [T. Li et al., Quantum anomalous Halleffect from intertwined moir ́e bands. arXiv [Preprint] (2021).https://arxiv.org/abs/2107.01796 (Accessed 5 July 2021)]. In thiswork, using first-principle calculations and continuum modeling,we reveal the displacement field–induced topological moir ́e bandsin AB-stacked TMD heterobilayer MoTe2/WSe2. Valley-contrastingChern bands with nontrivial spin texture are formed from inter-layer hybridization between MoTe2and WSe2bands of nominallyopposite spins. Our study establishes a recipe for creating topo-logical bands in AB-stacked TMD bilayers in general, which pro-vides a highly tunable platform for realizing quantum-spin Halland interaction-induced quantum anomalous Hall effects
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1073/pnas.2112673118
