Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip
Name
1708.04614.pdf
Description
Accepted version
Size
1.88 MB
Format
Adobe PDF
Checksum (MD5)
b624efcbd45e8b5a50e1b813bf491f21
Author(s)
Kim, Je-Hyung
Aghaeimeibodi, Shahriar
Richardson, Christopher JK
Leavitt, Richard P
Englund, Dirk
Waks, Edo
Date Issued
2017
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Version
Author's final manuscript
Abstract
© 2017 American Chemical Society. Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/ACS.NANOLETT.7B03220
