Optical gain and lasing from band-engineered Ge-on-Si at room temperature
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Kimerling_Optical gain.pdf
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Author(s)
Liu, Jifeng
Sun, Xiaochen
Camacho-Aguilera, Rodolfo Ernesto
Cai, Yan
Kimerling, Lionel C.
Michel, Jurgen
Date Issued
July 2010
Journal
Proceedings of the 2010 15th OptoeElectronics and Communications Conference (OECC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Jifeng, Liu et al. "Optical gain and lasing from band-engineered Ge-on-Si at room temperature." 15th OptoElectronics and Communications Conference (OECC2010) Technical Digest, July 2010, Sapporo Convention Center, Japan. Copyright © 2010, by The Institute of Electronics, Information and Communication Engineers
Version
Final published version
Abstract
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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DOI of Published Version
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5588537
