Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
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Author(s)
Mendoza, Hiroshi A.
Ashall, Daniel T.
Yin, Allen S.
Baldo, Marc A.
Bahlke, Matthias Erhard
Date Issued
September 2012
Journal
Advanced Materials
Publisher
Wiley Blackwell
Citation
Bahlke, Matthias E., Hiroshi A. Mendoza, Daniel T. Ashall, Allen S. Yin, and Marc A. Baldo. “Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO2 Resists.” Advanced Materials 24, no. 46 (December 4, 2012): 6136-6140. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Version
Final published version
Abstract
To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1002/adma.201202446
