Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells
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Jaramillo_Co-optimization.pdf
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1.73 MB
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Checksum (MD5)
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Author(s)
Park, Helen Hejin
Heasley, Rachel
Sun, Leizhi
Sinsermsuksakul, Prasert
Chua, Danny
Gordon, Roy G.
Steinmann, Vera
Jaramillo, Rafael
Hartman, Katherine
Chakraborty, Rupak
Date Issued
June 2015
Journal
Progress in Photovoltaics: Research and Applications
Publisher
Wiley-Blackwell
Citation
Park, Helen Hejin et al. “Co-Optimization of SnS Absorber and Zn(O,S) Buffer Materials for Improved Solar Cells.” Progress in Photovoltaics: Research and Applications 23, 7 (May 2014): 901–908 © 2014 John Wiley & Sons, Ltd
Version
Author's final manuscript
Abstract
Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1002/PIP.2504
