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  4. Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

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Author(s)
Maznev, Alexei
•
Hofmann, Felix
•
Jandl, Adam Christopher
•
Esfarjani, Keivan
•
Bulsara, Mayank
•
Fitzgerald, Eugene A.
•
Chen, Gang
•
Nelson, Keith Adam
Date Issued
January 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Maznev, A. A. et al. “Lifetime of sub-THz Coherent Acoustic Phonons in a GaAs-AlAs Superlattice.” Applied Physics Letters 102.4 (2013): 041901.
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Author's final manuscript
Abstract
We measure the lifetime of the zone-center 340 GHz longitudinal phonon mode in a GaAs-AlAs superlattice excited and probed with femtosecond laser pulses. By comparing measurements conducted at room temperature and liquid nitrogen temperature, we separate the intrinsic (phonon-phonon scattering) and extrinsic contributions to phonon relaxation. The estimated room temperature intrinsic lifetime of 0.95 ns is compared to available calculations and experimental data for bulk GaAs. We conclude that ∼0.3 THz phonons are in the transition zone between Akhiezer and Landau-Rumer regimes of phonon-phonon relaxation at room temperature.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. School of Engineering
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike 3.0
http://creativecommons.org/licenses/by-nc-sa/3.0/
Persistent DSpace Link
http://hdl.handle.net/1721.1/78357
DOI of Published Version
https://doi.org/10.1063/1.4789520
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