Moving mesh adaptation for Si and GaN-based power device simulation
Name
10825_2018_1218_ReferencePDF.pdf
Size
1.53 MB
Format
Adobe PDF
Checksum (MD5)
c628dd84e2582735d5b6c7193f9bc5b6
Author(s)
Ismail, Fawad
Sarker, Palash
Mohamed, Mohamed
Kim, Kyekyoon
Ravaioli, Umberto
Date Issued
July 24, 2018
Publisher
Springer US
Version
Author's final manuscript
Abstract
Abstract
In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device simulation is an important problem and can help deal with the convergence and numerical stability issues, as well as automate the meshing process. We demonstrate the efficacy of our proposed meshing scheme through the simulation of a GaN-based power diode, as well as a Si diode with a non-rectangular doping profile, by externally coupling our framework to Sentaurus Device TCAD. We perform error analysis and compare our results with simulations based on high-resolution uniform structured meshes as well as manually refined axis-aligned meshes. In addition to the benefits in terms of accuracy, automation, and generality, our method can be regarded as a stepping stone toward computationally scalable and adaptive semiconductor device simulations.
MIT Department
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1007/s10825-018-1218-5
