Direct-gap optical gain of Ge on Si at room temperature
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Kimerling_Direct-gap optical.pdf
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Author(s)
Liu, Jifeng
Sun, Xiaochen
Kimerling, Lionel C.
Michel, Jurgen
Date Issued
May 2009
Journal
Optics Letters
Publisher
Optical Society of America
Citation
Liu, Jifeng, Xiaochen Sun, Lionel C. Kimerling, and Jurgen Michel. “Direct-gap optical gain of Ge on Si at room temperature.” Optics Letters 34, no. 11 (May 29, 2009): 1738.© 2009 Optical Society of America.
Version
Final published version
Abstract
Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on what is to our knowledge the first experimental observation of optical gain in the wavelength range of 1600–1608 nm from the direct-gap transition of n+ tensile-strained Ge on Si at room temperature under steady-state optical pumping. This experimental result confirms that the band-engineered Ge on Si is a promising gain medium for monolithic lasers on Si.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1364/OL.34.001738
