Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
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FINALVERSION_update.pdf
Description
Accepted version
Size
656.49 KB
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Checksum (MD5)
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Author(s)
Zhang, Yuhao
Sun, Min
Perozek, Joshua A.
Liu, Zhihong
Zubair, Ahmad
Piedra, Daniel
Chowdhury, Nadim
Gao, Xiang
Shepard, Kenneth
Palacios, Tomas
Date Issued
November 2018
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Zhang, Yuhao et al. "Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit." IEEE Electron Device Letters 40, 1 (January 2019): 75 - 78 © 2018 IEEE
Version
Author's final manuscript
Abstract
This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between the conduction and switching power losses. Our GaN vertical FinFETs exhibit high-frequency (MHz) switching capabilities and superior switching FOMs when compared with commercial 0.9-1.2-kV Si and SiC power transistors. This letter shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1109/led.2018.2880306
