Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter
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Final version_alcohol.pdf
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Author(s)
Lu, Wenjie
Zhao, Xin
Choi, Dongsung
El Kazzi, Salim
del Alamo, Jesus A
Date Issued
April 2017
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Wenjie et al. "Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter." IEEE Electron Device Letters 38, 5 (May 2017): 548 - 551 © 2017 IEEE
Version
Author's final manuscript
Abstract
This letter introduces a novel alcohol-based digital etch technique for III-V FinFET and nanowire MOSFET fabrication. The new technique addresses the limitations of the conventional water-based approach in enabling structures with sub-10-nm 3-D features. Using the same oxidation step, the new technique shows an etch rate of 1 nm/cycle, identical to the conventional approach. Sub-10 nm fins and nanowires with a high mechanical yield have been achieved. InGaAs nanowires with a diameter of 5 nm and an aspect ratio greater than 40 have been demonstrated. The new technique has also been successfully applied to InGaSb-based heterostructures, the first demonstration of digital etch in this material system. Vertical InGaAs nanowire gate-all-around MOSFETs with a subthreshold swing of 70 mV/decade at V DS = 50 mV have been obtained at a nanowire diameter of 40 nm, demonstrating the good interfacial quality that the new technique provides.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1109/led.2017.2690598
