Efficient Modeling for Short Channel MOS Circuit Cimulation
Name
MIT-LCS-TR-277.pdf
Size
2.08 MB
Format
Adobe PDF
Checksum (MD5)
49c1f1498a91851004fd6d6b8967d337
Author(s)
Johnson, Mark Griffin
Advisor(s)
Ward, Stephen A.
Date Issued
August 1982
Series/Report no.
MIT-LCS-TR-277
Abstract
Existing circuit models for short-channel MOS transistors represent a compromise between speed and ease of use. Empirical models are very fast to evaluate, but their parameters must be fitted from experimental measurements. Theoretical models require longer computation time, but they may be used to predict the performance of new, unmeasured MOS technologies since their parameters are not curve-fitted from experimental data.
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