Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor
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Kimerling_Ge-on-si integrated.pdf
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711.43 KB
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Author(s)
Jifeng, Liu
Michel, Jurgen
Kimerling, Lionel C.
Date Issued
November 2010
Journal
Proceedings of the 2010 23rd Annual Meetings of the IEEE Photonics Society
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Jifeng, Jurgen Michel, and Lionel C. Kimerling. “Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor.” 2010 23rd Annual Meetings of the IEEE Photonics Society. IEEE, 2010. 325–326. ©2010 IEEE
Version
Final published version
Abstract
We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than 60 years ago.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/PHOTONICS.2010.5698891
