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  5. Deposition and characterization of very low pressure CVD silicon/silicon-germanium heteroepitaxial structures

Deposition and characterization of very low pressure CVD silicon/silicon-germanium heteroepitaxial structures

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27782062-MIT.pdf

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Author(s)
Tsai, Curtis.
Date Issued
1992
Publisher
Massachusetts Institute of Technology
Description
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992
Includes bibliographical references (leaves 135-146).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.
http://dspace.mit.edu/handle/1721.1/7582
Persistent DSpace Link
https://hdl.handle.net/1721.1/164703
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