1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge
Name
Ng-2009-1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge.pdf
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555.43 KB
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Checksum (MD5)
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Author(s)
Yoon, Soon Fatt
Chen, Kah Pin
Ng, Tien Khee
Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio
Lew, Kim Luong
Pitera, Arthur J.
Ringel, Steve A.
Carlin, Andrew M.
Alternative Title
1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge
Date Issued
February 2010
Journal
34th IEEE Photovoltaic Specialists Conference (PVSC), 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.
Version
Final published version
Abstract
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Singapore-MIT Alliance in Research and Technology (SMART)
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/PVSC.2009.5411736
