MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
Name
AMMNS020.pdf
Size
450.19 KB
Format
Adobe PDF
Checksum (MD5)
38a3b0c6ae61259fa9d1350510b4d83c
Author(s)
Fitzgerald, Eugene A.
Lee, Minjoo L.
Leitz, Christopher W.
Antoniadis, Dimitri A.
Date Issued
January 2003
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital alloy heterostructures. By optimizing growth conditions and understanding the physics of hole and electron transport in these devices, we have fabricated nearly symmetric mobility p- and n-MOSFETs on a common Si₀.₅Ge₀.₅ virtual substrate.
Subjects
SiGe
strained silicon
germanium
MOSFETs
hole mobility
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