Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts
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Author(s)
Zhao, Xin
Heidelberger, Christopher
Fitzgerald, Eugene A
Lu, Wenjie
Vardi, Alon
del Alamo, Jesus A
Date Issued
August 2018
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Zhao, Xin et al. "Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts." IEEE Transactions on Electron Devices 65, 9 (September 2018): 3762 - 3768 © 2018 IEEE
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Author's final manuscript
Abstract
Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. In this paper, we present a detailed study of the impact of Ni and Mo contacts on the electrical characteristics of highly scaled InGaAs VNW MOSFETs. Sequential annealing experiments are presented that reveal the optimum temperature for each type of contact. A negative temperature dependence of the ON-resistance of 7-nm-diameter Ni-contacted devices suggests the existence of an energy barrier. We also observe an unexpected transconductance and drain-induced barrier loweirng (DIBL) dependence on transistor diameter in Ni-contacted devices as well as abnormal DIBL asymmetry to swapping source and drain. All these results can be explained by Ni diffusing down the nanowire during the contact annealing process, reducing the effective channel length, and creating a Schottky-barrier drain.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1109/ted.2018.2859202
