High-Speed Production of Crystalline Semiconducting Polymer Line Arrays by Meniscus Oscillation Self-Assembly
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183_Jeon_20_High-Speed Crystalline Semiconducting.pdf
Description
Accepted version
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8.87 MB
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Author(s)
Jeon, Jisoo
Tan, Alvin TL
Lee, Jaeyong
Park, Jeong Eun
Won, Sukyoung
Kim, Sanha
Bedewy, Mostafa
Go, Jamison
Kim, Jin Kon
Hart, A John
Date Issued
2020
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Jeon, Jisoo, Tan, Alvin TL, Lee, Jaeyong, Park, Jeong Eun, Won, Sukyoung et al. 2020. "High-Speed Production of Crystalline Semiconducting Polymer Line Arrays by Meniscus Oscillation Self-Assembly." ACS Nano, 14 (12).
Version
Author's final manuscript
Abstract
© Evaporative self-assembly of semiconducting polymers is a low-cost route to fabricating micrometer and nanoscale features for use in organic and flexible electronic devices. However, in most cases, rate is limited by the kinetics of solvent evaporation, and it is challenging to achieve uniformity over length- and time-scales that are compelling for manufacturing scale-up. In this study, we report high-throughput, continuous printing of poly(3-hexylthiophene) (P3HT) by a modified doctor blading technique with oscillatory meniscus motion - meniscus-oscillated self-assembly (MOSA), which forms P3HT features ∼100 times faster than previously reported techniques. The meniscus is pinned to a roller, and the oscillatory meniscus motion of the roller generates repetitive cycles of contact-line formation and subsequent slip. The printed P3HT lines demonstrate reproducible and tailorable structures: nanometer scale thickness, micrometer scale width, submillimeter pattern intervals, and millimeter-to-centimeter scale coverage with highly defined boundaries. The line width as well as interval of P3HT patterns can be independently controlled by varying the polymer concentration levels and the rotation rate of the roller. Furthermore, grazing incidence wide-angle X-ray scattering (GIWAXS) reveals that this dynamic meniscus control technique dramatically enhances the crystallinity of P3HT. The MOSA process can potentially be applied to other geometries, and to a wide range of solution-based precursors, and therefore will develop for practical applications in printed electronics.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
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DOI of Published Version
https://doi.org/10.1021/ACSNANO.0C07268
