Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor
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Ram_Waveguide-coupled.pdf
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Author(s)
Alloatti, Luca
Srinivasan, Srinivasan A.
Orcutt, Jason Scott
Ram, Rajeev J.
Date Issued
July 2015
Journal
Applied Physics Letters
Citation
Alloatti, L., S. A. Srinivasan, J. S. Orcutt, and R. J. Ram. “Waveguide-Coupled Detector in Zero-Change Complementary Metal–oxide–semiconductor.” Applied Physics Letters 107, no. 4 (July 27, 2015): 041104. © 2015 AIP Publishing LLC
Version
Final published version
Abstract
We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1063/1.4927393
