Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
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Author(s)
Zhang, Yuhao
Sun, Min
Jayanta Joglekar, Sameer
Fujishima, Tatsuya
Palacios, Tomas
Date Issued
June 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Zhang, Yuhao et al. “Threshold Voltage Control by Gate Oxide Thickness in Fluorinated GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.” Applied Physics Letters 103, 3 (July 2013): 033524 © 2013 AIP Publishing
Version
Final published version
Abstract
This paper demonstrates the compensation of the intrinsic positive charges in Al₂O₃ gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al₂O₃. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the V[subscript th] of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the V[subscript th] increases with gate dielectric thickness, exceeding 3.5V for gate dielectrics 25 nm thick.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4815923
