Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films
Name
910342499-MIT.pdf
Description
Full printable version
Size
6.27 MB
Format
Adobe PDF
Checksum (MD5)
bbff7e74fbbc665a8bc7c969697df809
Author(s)
Dane, Andrew E. (Andrew Edward)
Advisor(s)
Karl K. Berggren.
Alternative Title
Reactive direct current magnetron sputtering of ultrathin superconducting niobium nitride films
Date Issued
2015
Publisher
Massachusetts Institute of Technology
Abstract
DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition.
Description
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references.
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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