Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress
Author(s)
Wu, Yufei
del Alamo, Jesus A
Date Issued
June 2017
Journal
IEEE International Reliability Physics Symposium Proceedings
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wu, Yufei and Jesus A. del Alamo. "Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress." IEEE International Reliability Physics Symposium Proceedings, April 2017, Monterey, CA, USA, Institute of Electrical and Electronics Engineers, June 2017 © 2017 IEEE
Version
Author's final manuscript
Abstract
Schottky gate degradation of W-band InAlN/AlN/GaN high-electron-mobility transistors (HEMTs) has been studied under prolonged positive gate stress. Two different degradation mechanisms have been identified. In an early stage, a gate leakage current increase takes place without any observable drain current nor source and drain resistance degradation. We propose electric field induced trap generation in the AlN barrier layer as the cause. Under harsher gate stress, a second degradation mechanism kicks in where gate leakage current, as well as drain current and the source and drain resistances degrade significantly. We attribute this to Schottky barrier degradation due to severe local self-heating.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/irps.2017.7936284
