Germanium on insulator fabrication technology
Name
57418313-MIT.pdf
Description
Full printable version
Size
5.82 MB
Format
Adobe PDF
Checksum (MD5)
9109c7d009cbf0d210d7c3222faa0283
Author(s)
Hennessy, John, 1980-
Advisor(s)
.
Date Issued
2004
Publisher
Massachusetts Institute of Technology
Abstract
As CMOS devices continue to scale to smaller dimensions, it has become clear that new materials and structures are needed to also continue to improve performance. Germanium on insulator is proposed as it combines both a high mobility material (relative to silicon) and a structure with improved scaling characteristics compared to bulk devices. The goal of this work is to develop of procedure for the transfer of a germanium layer to bulk silicon by means of wafer bonding and hydrogen-induced layer transfer.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 53-55).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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