Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
Name
Defects Reduction of Ge Epitaxial Film in a Germanium-on-Insulator Wafer by Annealing in Oxygen Ambient.pdf
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5 MB
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Author(s)
Lee, Kwang Hong
Bao, Shuyu
Chong, Gang Yih
Tan, Yew Heng
Fitzgerald, Eugene A.
Tan, Chuan Seng
Date Issued
January 2015
Journal
APL Materials
Publisher
American Institute of Physics (AIP)
Citation
Lee, Kwang Hong, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Eugene A. Fitzgerald, and Chuan Seng Tan. “Defects Reduction of Ge Epitaxial Film in a Germanium-on-Insulator Wafer by Annealing in Oxygen Ambient.” APL Materials 3, no. 1 (January 1, 2015): 16102.
Version
Final published version
Abstract
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 10[superscript 6] cm[superscript −2].
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.4905487
