On-chip graphene optoelectronic devices for high-speed modulation and photodetection
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Englund_On-chip graphene.pdf
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1.94 MB
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Author(s)
Shiue, Ren-Jye
Gan, Xuetao
Englund, Dirk Robert
Date Issued
February 2014
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Shiue, Ren-Jye, Xuetao Gan, and Dirk Englund. “On-Chip Graphene Optoelectronic Devices for High-Speed Modulation and Photodetection.” Edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. Photonic and Phononic Properties of Engineered Nanostructures IV (February 19, 2014). © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Version
Final published version
Abstract
There has been a rapidly growing interest in graphene-based optoelectronics. This exceptional material exhibits broadband optical response, ultrahigh carrier mobility and more importantly, potential compatibility with silicon complementary metal-oxide semiconductor (CMOS) technology. Here we present our recent works that integrate graphene with silicon channel waveguides and photonic crystal cavities. By coupling graphene to an optical cavity, we demonstrated an efficient electro-optic modulator that features a modulation depth of 10 dB and a switching energy of 300 fJ. Several high-speed modulators are also tested, showing a speed up to 0.57 GHz. In addition, we implemented a graphene photodetector on a silicon waveguide. The 53-μm-long graphene channel couples to the evanescent field of the waveguide mode, resulting in more than 60% absorption of the input light. We demonstrated a responsivity of 0.108 A/W in our photodetector. A data transmission of 12 Gbps and response time in excess of 20 GHz are also achieved. These results show the feasibility of graphene as a building block for silicon photonic integrated circuits. In particular, on-chip graphene active devices such as modulators and photodetectors are promising for their broadband response, high-speed operation, low power consumption and ease-to-fabrication.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.2047906
