High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Name
RLE_PR_133_01_01s_07.pdf
Size
3.45 MB
Format
Adobe PDF
Checksum (MD5)
1685017196b17aa9f301a1aa53ed673a
Author(s)
del Alamo, Jesus A.
Bahl, Sandeep R.
Azzam, Walid
Leary, Michael H.
Odoardi, Angela R.
Date Issued
1990-01-01 to 1990-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133
Description
Contains an introduction, reports on two research projects and a list of publications and conference papers.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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