Strong spin–orbit quenching via the product Jahn–Teller effect in neutral group IV qubits in diamond
Name
s41535-020-00281-7.pdf
Description
Published version
Size
1.18 MB
Format
Adobe PDF
Checksum (MD5)
688f550ed62c706c77383fdf0d515907
Author(s)
Harris, Isaac B.
Englund, Dirk R.
Date Issued
October 2020
Journal
npj Quantum Materials
Publisher
Springer Science and Business Media LLC
Citation
Ciccarino, Christopher J. et al. “Strong spin–orbit quenching via the product Jahn–Teller effect in neutral group IV qubits in diamond.” npj Quantum Materials, 5, 1 (October 2020): 75 © 2020 The Author(s)
Version
Final published version
Abstract
Artificial atom qubits in diamond have emerged as leading candidates for a range of solid-state quantum systems, from quantum sensors to repeater nodes in memory-enhanced quantum communication. Inversion-symmetric group IV vacancy centers, comprised of Si, Ge, Sn, and Pb dopants, hold particular promise as their neutrally charged electronic configuration results in a ground-state spin triplet, enabling long spin coherence above cryogenic temperatures. However, despite the tremendous interest in these defects, a theoretical understanding of the electronic and spin structure of these centers remains elusive. In this context, we predict the ground-state and excited-state properties of the neutral group IV color centers from first principles. We capture the product Jahn–Teller effect found in the excited state manifold to second order in electron–phonon coupling, and present a nonperturbative treatment of the effect of spin–orbit coupling. Importantly, we find that spin–orbit splitting is strongly quenched due to the dominant Jahn–Teller effect, with the lowest optically-active 3Eu state weakly split into ms-resolved states. The predicted complex vibronic spectra of the neutral group IV color centers are essential for their experimental identification and have key implications for use of these systems in quantum information science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1038/s41535-020-00281-7
