Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
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Palacios_Self-consistent electro-thermal.pdf
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Author(s)
Gao, Feng
Lo, Hsin-Yi
Ram, Rajeev J.
Palacios, Tomas
Date Issued
June 2010
Journal
Proceedings of the Device Research Conference (DRC), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Gao, Feng et al. “Self-consistent Electro-thermal Simulation of AlGaN/GaN HEMTs for Reliability Prediction.” Device Research Conference (DRC), 2010. 127–128. © Copyright 2010 IEEE
Version
Final published version
Abstract
n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/DRC.2010.5551870
