Sol-gel synthesis of one-dimensional photonic bandgap structures
Name
43961186-MIT.pdf
Description
Full printable version
Size
2.42 MB
Format
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Checksum (MD5)
caed5cf1105446962a69120b15a7b15c
Author(s)
Sparks, Andrew William, 1977-
Advisor(s)
Lionel C. Kimerling.
Date Issued
1999
Publisher
Massachusetts Institute of Technology
Abstract
A series of one-dimensional photonic bandgap devices were fabricated using SiO2 and TiO2 films deposited from solution by the sol-gel method. A dielectric mirror, or broadband interference filter, was fabricated by alternating quarter-wave optical thickness layers of the two films on a silicon substrate for a total of six layer pairs. This device exhibited an omnidirectional photonic bandgap of 450 nm in TE-polarization and 110 nm in TM-polarization. A microcavity, or narrowband filter, was fabricated with a TiO2 Fabry-Perot cavity sandwiched between two mirrors of three layer pairs each. The resonant cavity corresponded to a wavelength of roughly 1500 nm and shifted to shorter wavelengths with increasing incident angles. A maximum resonant quality factor of 11. 7 was achieved.
Description
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
Includes bibliographical references (p. 26-27).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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