Higher-order Floquet topological phases with corner and bulk bound states
Name
PhysRevB.100.085138.pdf
Size
1.68 MB
Format
Adobe PDF
Checksum (MD5)
a256b0308db9c47c5f79caea20c8ec3e
Author(s)
Rodriguez-Vega, Martin
Kumar, Abhishek
Seradjeh, Babak
Date Issued
August 2019
Journal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Rodriguez-Vega, Martin et al. "Higher-order Floquet topological phases with corner and bulk bound states." Physical Review B 100, 8 (August 2019): 085138 © 2019 American Physical Society
Version
Final published version
Abstract
We report the theoretical discovery and characterization of higher-order Floquet topological phases dynamically generated in a periodically driven system with mirror symmetries. We demonstrate numerically and analytically that these phases support lower-dimensional Floquet bound states, such as corner Floquet bound states at the intersection of edges of a two-dimensional system, protected by the nonequilibrium higher-order topology induced by the periodic drive. We characterize higher-order Floquet topologies of the bulk Floquet Hamiltonian using mirror-graded Floquet topological invariants. This allows for the characterization of a new class of higher-order “anomalous” Floquet topological phase, where the corners of the open system host Floquet bound states with the same as well as with double the period of the drive. Moreover, we show that bulk vortex structures can be dynamically generated by a drive that is spatially inhomogeneous. We show these bulk vortices can host multiple Floquet bound states. This “stirring drive protocol” leverages a connection between higher-order topologies and previously studied fractionally charged, bulk topological defects. Our work establishes Floquet engineering of higher-order topological phases and bulk defects beyond equilibrium classification, and it offers a versatile tool for dynamical generation and control of topologically protected Floquet corner and bulk bound states.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Lincoln Laboratory
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DOI of Published Version
https://doi.org/10.1103/physrevb.100.085138
