High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Name
RLE_PR_134_01_01s_02.pdf
Size
4.1 MB
Format
Adobe PDF
Checksum (MD5)
0c050de958d961211c035b3ff157b420
Author(s)
del Alamo, Jesús A.
Awanol, Yuji
Bahl, Sandeep R.
Bennett, Brian B.
Leary, Michael H.
Moolji, Akbar A.
Donovan, Kelley S.
Odoardi, Angela R.
Date Issued
1991-01-01 to 1991-12-31
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134
Description
Contains an introduction and a report on one research project.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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