Band-to-band tunneling in silicon diodes and tunnel transistors
Name
679684306-MIT.pdf
Description
Full printable version
Size
2.35 MB
Format
Adobe PDF
Checksum (MD5)
86c09577525d9f224c81596849994078
Author(s)
Teherani, James Towfik
Advisor(s)
Judy L. Hoyt and Dimitri A. Antoniadis.
Date Issued
2010
Publisher
Massachusetts Institute of Technology
Abstract
This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling direction along <100> and <110> crystal directions. A theoretical analysis based on the Wentzel-Kramers-Brillouin (WKB) approximation for tunneling probability combined with an uncoupled full-band Poisson equation solver and the calculated band structure changes is developed to model the experimental results. Reasonable agreement between experimental data and theoretical calculations is found when comparing the relative change in tunneling current at 1 V reverse-bias versus strain for different substrate orientation/strain configurations.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student submitted PDF version of thesis.
Includes bibliographical references (p. 82-83).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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