Single-Step Deposition of Cerium-Substituted Yttrium Iron Garnet for Monolithic On-Chip Optical Isolation
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Author(s) • • • • • • •
Du, Qingyang
Goto, Taichi
Kim, Dong Hun
Aimon, Nicolas M.
Hu, Juejun
Ross, Caroline A.
Sun, Xueyin
Onbasli, Mehmet Cengiz
Date Issued
June 2015
Journal
ACS Photonics
Publisher
American Chemical Society (ACS)
Citation
Sun, Xue Yin, Qingyang Du, Taichi Goto, Mehmet C. Onbasli, Dong Hun Kim, Nicolas M. Aimon, Juejun Hu, and Caroline A. Ross. “Single-Step Deposition of Cerium-Substituted Yttrium Iron Garnet for Monolithic On-Chip Optical Isolation.” ACS Photonics 2, no. 7 (July 15, 2015): 856–863. © 2015 American Chemical Society
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Final published version
Abstract
Photonic integrated circuits require magneto-optical (MO) materials for making nonreciprocal devices such as isolators and circulators. The most successful MO materials are rare-earth-substituted iron garnets, but these can be challenging to grow on silicon without a seed layer, which introduces spacing loss between the waveguide and the MO cladding. A pulsed-laser deposition (PLD) method is used for making MO Ce:YIG (Ce[superscript 1]Y[superscript 2]Fe[superscript 5]O[superscript 12])/YIG (Y[superscript 3]Fe[superscript 5]O[superscript 12]) bilayer or trilayer films on different substrates, including silicon, quartz, and Gd[superscript 3]Ga[superscript 5]O[superscript 12] (GGG), in which a multilayer film is deposited in one run and then annealed. A YIG seed layer grown above the MO Ce:YIG facilitates recrystallization during ex situ rapid thermal annealing, which results in a reduced thermal budget and simplified deposition process. A monolithically integrated optical isolator was demonstrated by direct deposition of a bilayer Ce:YIG/YIG capping layer onto a silicon-on-insulator resonator. The device exhibited an insertion loss of 7.4 ± 1.8 dB and an isolation ratio of 13.0 ± 2.2 dB within the telecommunication window (λ = 1564.4 nm), which outperforms previously reported monolithic isolators.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1021/acsphotonics.5b00026