Inducing magnetism onto the surface of a topological crystalline insulator
Name
PhysRevB.91.195310.pdf
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792.82 KB
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Author(s)
Assaf, Badih A.
Satpati, B.
Heiman, D.
Katmis, Ferhat
Wei, Peng
Chang, Cui-zu
Moodera, Jagadeesh
Date Issued
May 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Assar, B. A., F. Katmis, P. Wei, Cui-Zu Chang, B. Satpati, J. S. Moodera, and D. Heiman. "Inducing magnetism onto the surface of a topological crystalline insulator." Phys. Rev. B 91, 195310 (May 2015). © 2015 American Physical Society
Version
Final published version
Abstract
Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS—a ferromagnetic insulator—induces magnetism at the interface between SnTe and EuS, and thus breaks time-reversal symmetry in the TCI. Magnetotransport experiments on SnTe-EuS-SnTe trilayer devices reveal a hysteretic lowering of the resistance at the TCI surface that coincides with an increase in the density of magnetic domain walls. This additional conduction could be a signature of topologically protected states within domain walls. Additionally, a hysteretic anomalous Hall effect reveals that the usual in-plane magnetic moment of the EuS layer is canted towards a perpendicular direction at the interface. These results are evidence of induced magnetism at the SnTe-EuS interfaces, resulting in broken time-reversal symmetry in the TCI.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Plasma Science and Fusion Center
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.91.195310
