Strain-tuned magnetic anisotropy in sputtered thulium iron garnet ultrathin films and TIG/Au/TIG valve structures
Name
115302_1_online.pdf
Size
3.17 MB
Format
Adobe PDF
Checksum (MD5)
0ad4be29f81a89fad2c28e446b279404
Author(s) • • • • • • • •
Vilela, Gilvânia
Chi, Hang
Stephen, Gregory
Settens, Charles
Zhou, Preston
Ou, Yunbo
Suri, Dhavala
Heiman, Don
Moodera, Jagadeesh S
Date Issued
March 17, 2020
Journal
Journal of Applied Physics
Publisher
AIP Publishing
Citation
Gilvânia Vilela, Hang Chi, Gregory Stephen, Charles Settens, Preston Zhou, Yunbo Ou, Dhavala Suri, Don Heiman, Jagadeesh S. Moodera; Strain-tuned magnetic anisotropy in sputtered thulium iron garnet ultrathin films and TIG/Au/TIG valve structures. J. Appl. Phys. 21 March 2020; 127 (11): 115302.
Version
Final published version
Abstract
Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain while maintaining high-quality surfaces is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films and, thus, tailor their magnetic properties by the thickness (7.5–60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick films annealed at 600 °C show compressive strain favoring an in-plane magnetic anisotropy, whereas films annealed above 800 °C are under a tensile strain leading to a perpendicular magnetic anisotropy. Air-annealed films present a high degree of crystallinity and magnetization saturation close to the bulk value. These results lead to the successful fabrication of trilayers TIG/Au/TIG with coupling between the TIG layers depending on Au thickness. These results will facilitate the use of TIG to create various in situ clean hybrid structures for fundamental interface exchange studies and toward the development of complex devices. Moreover, the sputtering technique is advantageous as it can be easily scaled up for industrial applications.
MIT Department
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.5135012